Abstract

Inverse lithography technique, which treats mask synthesis as an inverse problem, has been considered as a strong contender to deal with the 45 nm technology node and beyond. But one problem exists in present pixel based mask synthesis algorithms: to describe mask patterns more accurately and to obtain better image quality, usually need finer grid representation, which results in extremely intensive computations. In this paper, a new method is proposed to mitigate this issue based on level-set method. This method utilizes the coarse-grid-approximation (CGA), which means the mask pattern defined on the fine grids is approximated using a new mask defined on coarse grids. The mask optimization is then performed on coarse girds and the final result is acquired by extracting mask patterns from coarse grids to fine grids. This method is demonstrated using a periodic array of contact holes pattern. Comparing with a gradient based algorithm and the traditional level-set algorithm, this method can provide almost the same image quality, but with over 100X running speed enhancement.

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