Abstract
High NA (0.55) EUV lithography will be using anamorphic imaging with asymmetric X and Y magnification (4x8). Imaging at higher NA with specific change of light-rays solid angles at mask level will impact the known mask 3D effects. The SHARP EUV actinic mask-imaging microscope at LBNL allows imaging at NA0.55 emulating the relevant solid angles at mask level. It is therefore a nice tool to measure mask 3D effects experimentally in aerial images both at NA0.33 and at NA0.55. We will discuss under which conditions SHARP can be used to measure mask 3D effects using a dedicated reticle layout and a suited measurement methodology. The comparison of best focus shift for Lines/Spaces through pitch measured on SHARP to rigorous simulations at NA 0.33 gives us confidence in the tool capability and the measurement methodology. The validated methodology enables unique NA0.55 measurements of best focus shift trends through pitch matching with rigorous simulation trends, increasing our confidence both in the experiment and in the simulations at this unexplored high NA EUV imaging.
Published Version
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