Abstract
A marked improvement in the reliability of a high-mobility In–Ga–Zn–O (IGZO) thin-film transistor (TFT) is presented after 150 °C annealing by applying hydrogenated IGZO (IGZO:H) as a channel. To enhance field-effect mobility (μFE), the atomic ratio of In:Ga:Zn was chosen to be 6:2:1. The IGZO:H TFT exhibited a μFE of 18.9 cm2 V−1 s−1 without hysteresis. Moreover, the reliability of the IGZO:H TFT significantly improved after 150 °C annealing as compared with that of a conventional IGZO TFT. Thus, the use of IGZO:H is an effective method of improving both the electrical properties and reliability of TFTs for flexible electronics.
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