Abstract
Zinc thioindate (ZnIn2S4) thin films on glass substrates were prepared by nebulized spray pyrolysis method with optimized deposition temperature. The deposited films were characterized using X-ray diffraction technique, UV–vis, Four probe, FESEM and EDAX. The structural characterization reveals that the film exhibits the polycrystalline nature of hexagonal phase. Flower like micro structure was observed from FESEM analysis. Direct and indirect band gap of the as-deposited film were found to be 2.40eV, 2.31eV, 1.90eV and 2.1eV at a growth temperature of 523K and 623K. ZnIn2S4 thin film was found to be an n-type semiconductor. It is found that the resistance decreases as the temperature increases.
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