MAPS sensor for radiation imaging designed in 180 nm SOI CMOS technology

Abstract

In this work, we present a prototype of the Monolithic Active Pixel Sensor (MAPS) called X-CHIP-02 designed in 180 nm SOI CMOS technology. The selected technology has attractive features for fabrication of X-ray imaging sensors: 100 Ω⋅ cm handle wafer resistivity, thick epitaxial layer to suppress back-gate effect, support of high voltage devices and deep trench isolation. X-CHIP-02 has two pixel matrices with the pixel pitch of 50 μm and 100 μm with integrated 8-bit photon counting circuitry. Fine pitch SOI monolithic pixels imply small capacitance and thus small electronic noise of ≈50 e−. Design of the sensor chip and basic radiation imaging capabilities are described in this paper.