Abstract
We report on the spatial uniformity of the photoresponces produced by a quantum dot, optically gated, field-effect transistor (QDOGFET) with photon-number-resolving capabilities. In these devices, a photoresponce is produced when a photon photocharges a quantum dot, altering the current flowing through the transistor. Variation in the photoreponces produced by different quantum dots reduces the photon-number resolution of the QDOGFET. By using an optical scanning microscope (OMS) to spatially resolve the photoresponse and a solid immersion lens (SIL) to enhance the spatial resolution of the OSM, we acquire contour plots depicting the response magnitude and efficiency of the QDOGFET across the active area. In an analysis of the contour plots, we found that the QDOGFET exhibits optimal signal uniformity when operated at low gate voltages.
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