Mapping of ion-implanted n-SiC schottky contacts using scanning internal photoemission microscopy

Abstract

Nitrogen-ion-implantation damage on SiC has been clearly imaged using scanning internal photoemission microscopy (SIPM). Ni Schottky contacts were formed on selectively N-ion-implanted n-SiC surfaces at 80keV with an ion dose of 1×1015cm−2. A photocurrent, Y (photoyield; defined as photocurrent per incident photon), was detected by focusing and scanning a laser beam over the contacts. The N-ion-implanted regions were clearly imaged with Y measurements. Y was detected even where the implanted region is protruding out of the electrode in the unannealed sample. We also found significant increase of Y in the periphery of the ion-implanted region. We confirmed that SIPM is a powerful tool for mapping damages due to ion implantation.