Abstract
The methods of light-induced absorption and diffraction have been used to investigate the uniformity of Si and GaAs wafers and ion-implanted Si. Metastable annealing of defects, lifetime modification by swirl and radiation defects and anomalous depth penetration of ion-implantation-created defects have been demonstrated in Si. The mapping of GaAs wafers has been performed with picosecond and nanosecond light pulses and light absorption mechanisms are discussed.
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