Mapping of AlxGa1−xAs band edges by ballistic electron emission spectroscopy

Abstract

We have employed ballistic electron emission microscopy (BEEM) to study the energy positions in the conduction band of AlxGa1−xAs. Epilayers of undoped AlxGa1−xAs were grown by molecular beam epitaxy on conductive GaAs substrates. The Al composition x took on values of 0, 0.11, 0.19, 0.25, 0.50, 0.80 and 1 so that the material was examined in both the direct and indirect band gap regime. The AlxGa1−xAs layer thickness was varied from 100 to 500 Å to ensure probing of bulk energy levels. Different capping layers and surface treatments were explored to prevent surface oxidation and examine Fermi level pinning at the cap layer/AlxGa1−xAs interface. All samples were metallized ex situ with a 100 Å Au layer so that the final BEEM structure is of the form Au/capping layer/AlxGa1−xAs/bulk GaAs. Notably we have measured the Schottky barrier height for Au on AlxGa1−xAs. We have also probed the higher lying band edges such as the X point at low Al concentrations and the L point at high Al concentrations. Variations of these critical energy positions with Al composition x were mapped out in detail and compared with findings from other studies. Local variations of these energy positions were also examined and found to be on the order of 30–50 meV. The results of this study suggest that BEEM can provide accurate positions for multiple energy levels in a single semiconductor structure.