Abstract
SiNx films formed on n-SiC layers have been characterized by using scanning internal photoemission microscopy (SIPM) in a metal–insulator–semiconductor diode structure. After applying forward-biased voltage stress up to 30 V, the diode was partially degraded. SIPM clearly imaged the degradation pattern with a large photocurrent, which was consistent with the microscopy image. These results clarified that the partial degradation induced a leak path with a low energy barrier.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
