Abstract
In this work, disordered-IrMn3/insulating-Y3Fe5O12 exchange-biased bilayers are studied. The behavior of the net magnetic moment ΔmAFM in the antiferromagnet is directly probed by anomalous and planar Hall effects, and anisotropic magnetoresistance. The ΔmAFM is proved to come from the interfacial uncompensated magnetic moment. We demonstrate that the exchange bias and rotational hysteresis loss are induced by partial rotation and irreversible switching of the ΔmAFM. In the athermal training effect, the state of the ΔmAFM cannot be recovered after one cycle of hysteresis loop. This work highlights the fundamental role of the ΔmAFM in the exchange bias and facilitates the manipulation of antiferromagnetic spintronic devices.
Highlights
In this work, disordered-IrMn3/insulating-Y3Fe5O12 exchange-biased bilayers are studied
We demonstrate that the exchange bias and rotational hysteresis loss are induced by partial rotation and irreversible switching of the DmAFM
For FM/AFM bilayers, the rotational hysteresis loss at external magnetic field H larger than the saturation field is ascribed to the irreversible switching of AFM spins during clock wise (CW) and counter clock wise (CCW) rotations[11,17,18]
Summary
In this work, disordered-IrMn3/insulating-Y3Fe5O12 exchange-biased bilayers are studied. The behavior of the net magnetic moment DmAFM in the antiferromagnet is directly probed by anomalous and planar Hall effects, and anisotropic magnetoresistance. Very few methods can be implemented to directly probe the AFM spins due to almost zero net magnetic moment of the AFM layers. In a pioneer work, tunneling anisotropic magnetoresistance (TAMR) effect has very recently been used to probe the motion of the AFM spins in AFM spintronic devices[26,27]. We demonstrate clear evidence of the existence of DmAFM and reveal its role in EB, the training effect, and the rotational hysteresis loss for disordered-IrMn3(5IrMn)/Y3Fe5O12 (5YIG) bilayers using anomalous Hall effect (AHE), planar Hall effect (PHE), and anisotropic magnetoresistance (AMR) measurements.
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