Abstract
The current work proposed the application of methylammonium lead iodide (MAPbI3) perovskite microrods toward photo resistor switches. A metal-semiconductor-metal (MSM) configuration with a structure of silver-MAPbI3(rods)-silver (Ag/MAPbI3/Ag) based photo-resistor was fabricated. The MAPbI3 microrods were prepared by adopting a facile low-temperature solution process, and then an independent MAPbI3 microrod was employed to the two-terminal device. The morphological and elemental compositional studies of the fabricated MAPbI3 microrods were performed using FESEM and EDS, respectively. The voltage-dependent electrical behavior and electronic conduction mechanisms of the fabricated photo-resistors were studied using current–voltage (I–V) characteristics. Different conduction mechanisms were observed at different voltage ranges in dark and under illumination. In dark conditions, the conduction behavior was dominated by typical trap-controlled charge transport mechanisms within the investigated voltage range. However, under illumination, the carrier transport is dominated by the current photogenerated mechanism. This study could extend the promising application of perovskite microrods in photo-induced resistor switches and beyond.
Highlights
During the last decade, hybrid organic–inorganic perovskites (HOIPs) have been extensively studied for the emerging perovskite solar cell technology and other optoelectronic applications
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The micrographs reveal the porous structure of MAPbI3 microrods
Summary
Hybrid organic–inorganic perovskites (HOIPs) have been extensively studied for the emerging perovskite solar cell technology and other optoelectronic applications. Besides the use of MAPbI3-based thin films in PV applications, other low dimensional perovskite structures, including zero-dimensional (0D) quantum dots (QDs), one dimensional (1D) nanowires (NWs) and nano/microrods, and two dimensional (2D) nanoplates, have been widely employed in optoelectronic applications [3,4,5]. Since perovskite crystals offer better performance relative to thin films in terms of effective light absorption, large surface-to-volume ratio, mechanical flexibility, and better charge separation and conductivity, they have been effectively incorporated in optoelectronic devices [6,7,8]. Among different sub-classes of low-dimensional materials, 1D microrods with a well-defined configuration offer superiority in terms of a 3–4-millimeter length range, confined excitons in one-dimension, effective photon coupling, less heterostructure defects, direct charge carriers transport routes, and simple solution-based technique growth [9,10,11,12]. Hcoawpaecvietor,r-hliekree,daeMvicAePs bhIa3vme ibcereonrofdabcroicnanteecdtebdy bseatnwdeweinchtwinog ma tehtainl efillemctroofdaessemiconductor has been explobiettewdeteonfotwrmo amMetSaMls. dHeovwicee.ver, here, a MAPbI3 microrod connected between two metal electrodes has been exploited to form a MSM device
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