Abstract
We have studied the low-temperature photoluminescence (PL) of n-type modulation doped In 0.53 Ga 0.47 As InP quantum wells. The photocreated holes are localised and can recombine with any of the electrons. The PL lineshape is strongly skewed to higher energies, on account of the many-body Fermi energy edge singularity. This interpretation is supported by calculations of the lineshape that include the screened electron-hole interaction, and by the temperature-dependence of the spectrum.
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