Abstract
The interaction of hot electrons (200-300 meV) with neutral electron-hole plasmas in bulk GaAs is theoretically investigated over a range of plasma temperatures and densities. Results obtained using a self-consistent, three-band (electron, heavy-, and light-hole) random-phase approximation for the system's dielectric function, including the lattice susceptibility, are compared with simpler approximations for treating the screened interaction between the hot electrons and the coupled plasma-longitudinal-optic-phonon system. Emphasis is placed on estimating the relative importance of hot-electron plasma versus hot-electron-LO-phonon scattering rates, to the extent that these can be distinguished
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