Manuscript numerical simulation on ultra-precision polishing of monocrystalline silicon by SPH method

Abstract

Ultra-precision polishing is an important processing method for monocrystalline silicon, in order to improve the machining efficiency and obtain good machining quality, it is necessary to investigate the material removal process and process parameters of ultra-precision polishing. Smoothed particle hydrodynamics (SPH) is a meshless method with good self-adaptability, it can be used in the simulation of ultra-precision polishing which has high speed deformation characteristics. The calculation model and SPH analysis model of ultraprecision polishing are established according to the principle of ultra-precision polishing, SPH method is used to simulate and analyze ultra-precision polishing of the monocrystalline silicon. The material removal process of ultra-precision polishing is investigated, the effects of abrasive size and indentation depth on the equivalent plastic strain (PEEQ), Mises stress and the force of abrasive is investigated. The result is that, at the different time of ultra-precision polishing, the maximum PEEQ is different, but the difference is not obvious; the X direction force of the abrasive increases with the indentation depth; the size of abrasive has a great influence on the soft coefficient of stress state in ultra-precision polishing. According to the simulation results, it is possible to optimize the technological parameters of ultra-precision polishing, and provide the theoretical guidance for practical production.