Abstract
The architecture of silicon multiplexers for multielement IR photodetectors is considered. A review is given of industrially oriented developments of linear (1 × 32, 1 × 288, 1 × 576) and matrix (32 × 32, 128 × 128, 160 × 128, 320 × 256) silicon multiplexers for mid- and far-IR photodetectors based on cadmium-mercury-tellurium, lead-tin-tellurium, and multilayer structures with quantum wells. An analysis is made of the temperature resolution of matrix IR photodetectors based on multiplexers with row and frame integration of photo signals using micrometer to deep submicron CMOS technologies. Typical parameters of the multiplexer and some of the infrared photodetectors designed at the Rzhanov Institute of Semiconductor Physics, SB RAS are given.
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