Abstract
The influence of a CO2 plasma treatment on the TCO/p -layer interface has been investigated. In combination with an optimized cell design and all laser patterning this method has led to an enhancement of the initial efficiency of 10.7 % on single junction a - Si:H modules 1 × 1 ft2 in size manufactured with pilot production equipment. Using the potential for further improvements and taking into account the previously measured photodegradation, a stabilized efficiency of 9% seems realistic.
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