Manufacturing a patternable metallized substrate for tungsten ultralong field emitter array by use of the double ion beam deposition method

Abstract

Using Ar ion beam precleaned surface, followed by in situ ion beam sputter deposition of the transition layer and the metal substrate layer sequentially, a double ion beam deposition method was realized. By using the double ion beam deposition method, a metallized substrate with excellent adherence, smooth as a mirror, and able to resist heat, must be grown successfully on the side of a double-polished tungsten ultralong field emitter array (W-UFEA) matrix surface. The substrate film offers not only W-UFEA for fabricating the leads, but also offers the possibility to form a patternable substrate, as well as fabrication of a low capacitive gate electrode for the field emitter array. This article introduces the fabrication and analysis of the metal substrate film, as well as two structure schemes to realize a low capacitive gated field emitter array.