Manufacturable local interconnect technology fully compatible with titanium salicide process

Abstract

Local interconnect technology has been widely accepted because of advantages such as increase of packing density and reduction of parasitics. Local interconnect technology of a new structure utilizing TiSi/sub 2/ from the reaction of Ti and polysilicon is described. The technology is fully compatible with the salicide process. Moreover, the processing offers low resistivity interconnection with low junction leakage because of its inherent structure. It is confirmed that the process is manufacturable for 0.5 mu m CMOS. >