Abstract
AbstractProfile control, process repeatability and productivity concerns in etching Pt electrodes are reviewed specifically for application in fabricating high-density BST/Pt capacitors. The approach of using a high temperature cathode in a high-density reactive plasma chamber has produced a repeatable >85° Pt profile, stable etch rate and low particle results over a 500-wafer marathon test. A “corrosion-like” BST defect can be prevented by adding a post etch treatment to remove any corrosive residue from the wafer surface. A feasible manufacturing solution for etching BST/Pt capacitors for future high-density DRAM application is demonstrated.
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