Abstract
This paper provides an overview of 3D detectors fabrication technology developed in the clean room of the Microelectronics Institute of Barcelona (IMB-CNM). Emphasis is put on manufacturability, especially on stress and bow issues. Some of the technological solutions proposed at IMB-CNM to improve manufacturability are presented. Results and solutions from other research institutes are also mentioned. Analogy with through-silicon-via technology is drawn. This article aims at giving hints of the technology improvements implemented to upgrade from a R&D process to a mature technology.
Highlights
These appealing features, come at the expense of non-uniform signal, large sensor capacitance, due the small inter-electrode spacing and long electrode depth, and increased complexity of fabrication
The IBL technical design report stated that the “main concerns specific to 3D sensors are manufacturability and uniformity of a production run” [10]
Ki-1 and Ki are the curvature of the wafer before and after deposition of layer i respectively. These results are valid within the thin film approximation: substrate thickness is much larger than film thickness, ti
Summary
These appealing features, come at the expense of non-uniform signal, large sensor capacitance, due the small inter-electrode spacing and long electrode depth, and increased complexity of fabrication. Ki-1 and Ki are the curvature of the wafer before and after deposition of layer i respectively These results are valid within the thin film approximation: substrate thickness is much larger than film thickness, ti
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