Abstract
In this study we report on manipulation of nucleation by means of periodic modulation of the growth rate, R , during molecular beam epitaxial growth of Si on Si(l11). We have found that the bilayer (BL)-by-BL growth can be improved by applying the R-modulation synchronized with the nucleation and that the phase of reflection high-energy electron diffraction (RHEED) intensity oscillations can be shifted independently of the bilayer (BL) deposition. A beating phenomenon of the RHEED oscillations was observed, which can be attributed to the superimposed effects of the R -modulation and the regular BL-by-BL growth. We have used the phenomenological correspondence between the surface step density and the RHEED oscillations as a basis to discuss the growth. By employing a kinetic solid-on-solid Monte Carlo model without vacancies and overhangs all significant experimental features could be simulated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
