Abstract
The flexible La0.7Sr0.3MnO3 (LSMO) film shows good mechanical stretchability and property stability under bending states, which makes it a candidate material for flexible electronics and spintronics devices. Here the microwave magnetism of flexible LSMO thin film has been manipulated effectively by the ionic gel (IG) gating process. A reversible and non-volatile magnetoelectric (ME) coefficient of 50 Oe/V was observed using electron paramagnetic resonance (ESR) technology at the flat multilayer structure. This ME coupling is caused by the electrons hopping between Mn3+ and Mn4+ ions under the interfacial electric double layer. When the membranes were bent to a radius of curvature of 15 mm, a larger ME coefficient of 67 Oe/V was also observed, which indicating that this flexible structure can work effectively under mechanical deformation. This work demonstrates the voltage control of magnetism for flexible correlated materials and paves a way towards wearable low-power devices based on flexible manganite films.
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