Abstract
We synthesized c-oriented ε-Fe2∼3N films on c-GaN by magnetron sputtering. The saturation magnetization and Curie temperature of ε-Fe2∼3N films are decreased due to the reducing of Fe-Fe ferromagnetic exchange coupling with increasing N participation. The state transitions of magnetization at low temperature are observed. The presented results on manipulable magnetic properties by Fe:N ratio show that ε-Fe2∼3N/GaN structure provides an advanced platform both for studying basic properties of ε-Fe2∼3N and for the design of spintronics devices.
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