Manipulable MR effect in a δ-doped magnetic nanostructure

Abstract

A magnetoresistance (MR) device was proposed by depositing two nanosized ferromagnetic strips on top and bottom of the semiconductor heterostructure. For the sake of manipulating its performance, we introduce a tunable [Formula: see text]-potential into this device with the help of the atomic-layer doping technique such as molecular beam epitaxy (MBE) or metal-organic chemical-vapor deposition (MOCVD). We investigate theoretically the impact of the [Formula: see text]-doping on the magnetoresistance ratio (MMRR) of the MR device. Although the [Formula: see text]-doping is embedded in the device, a considerable MR effect still exists due to different transmissions for the electron across parallel (P) and antiparallel (AP) configurations. Moreover, its MMRR varies sensitively with the magnitude and/or position of the [Formula: see text]-doping. Such an MR device can be controlled by changing the [Formula: see text]-doping, resulting in an adjustable MR device for magnetoelectronics applications.