Abstract
The total number of mobile ions in the oxide film in a Si-based MOS structure is determined by the conventional methods of recording capacitance-voltage and dynamic current-voltage characteristics. The fraction of ions in the neutral state at the Si-SiO2 interface is determined. Spectroscopy of the interface reveals a peak of the effective density of interface states. It is shown that the number of states in this peak corresponds to the number of neutralized particles. The mechanism for neutralization of the mobile charge of ions is discussed.
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