Manganite Heterojunction Photodetector with Broad Spectral Response Range from 200 nm to 2 μm.

Ru Chen,Zhiqing Lu,Kun Zhao

doi:10.3390/mi11020129

Abstract

In this paper, we investigate the broad spectral photocurrent properties of the La0.67Ca0.33MnO3/Si (LCMO/Si) heterojunction from 200 nm to 2.0 μm, as the temperature increases from 95 to 300 K. We observed the junction’s uniform responsivity in the visible range and five absorption peaks at 940 nm, 1180 nm, 1380 nm, 1580 nm, and 1900 nm wavelengths. The temperature showed effective affection to the photocurrents at absorption peaks and the transition point occurred at 216 K, which was also displayed in the temperature dependence of junction resistance. On the basis of the results, we propose a possible model involving the quantum size effect at the junction interface as the mechanism. This understanding of the infrared photodetection properties of oxide heterostructures should open a route for devising future microelectronic devices.

Highlights

Oxide semiconductor devices based on the perovskite oxide films, whose properties can be controlled by magnetic field, electric field, and light irradiation, have attracted a great deal of interest
Experiments confirmed that manganite-based perovskite-type oxides have excellent ultraviolet (UV) photoresponse characteristics with ultrafast response-time of picosecond and high sensitivity, which makes this class of materials potentially useful for UV sensor applications [1,2]
Manganite heterojunctions offer the features of tunability by magnetic and electric fields, high-sensitivity to light illumination and high carrier mobility, suggesting many possible applications and research directions including information storage, optoelectronics information processing, and advanced sample preparation techniques associated with microstructure modulate research [3–7]

Summary

Introduction

Oxide semiconductor devices based on the perovskite oxide films, whose properties can be controlled by magnetic field, electric field, and light irradiation, have attracted a great deal of interest. Experiments confirmed that manganite-based perovskite-type oxides have excellent ultraviolet (UV) photoresponse characteristics with ultrafast response-time of picosecond and high sensitivity, which makes this class of materials potentially useful for UV sensor applications [1,2]. Integrating the perovskite-type transition metal oxides with the silicon (Si)-based semiconductor technology would introduce the possibility for a multifunctional microelectronic device [13–15]. Si photodetectors have already found wide acceptance for visible light applications, while it has small absorption coefficient in near-infrared (NIR) wavelength range because of the cut off wavelength of ~1100 nm.

Materials and Methods

Conclusions