Abstract
Resistive random access memory and the corresponding cross-point array (CPA) structure have received a great deal of attention for high-density next generation non-volatile memory. However, the cross-talk issue of CPA structure by sneak current should be overcome to realize the highest density integration. To accomplish this, the sneak current can be minimized by high, nonlinear characteristic behaviors of resistive switching (RS). Therefore this study fabricated pnp bipolar hetero-junction structure using the perovskite manganite family, such as La0.7Sr0.3−xCaxMnO3 (LSCMO) and CaMnO3−δ (CMO), to obtain nonlinear RS behavior. The pnp structure not only shows nonlinear characteristics, but also a tunable characteristic with Ca substitution.
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