Abstract
The photoluminescence properties of heavily doped GaAs:Mn layers grown for the first time by liquid-phase epitaxy from a bismuth melt have been studied. Manganese-related centers of radiative and nonradiative recombination, in addition to the manganese substitutional acceptors (manganese replacing gallium), have been observed in this material. It is found that the concentrations of both centers increase with the doping level. A radiative recombination center with strong electron-lattice coupling has been observed for the first time. We believe that the high concentration of this new center may be a result of the growth method used. The ionization energy of this center is found to be equal to 41 meV.
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