Abstract
The luminescent properties of Ga 2O 3:Mn thin films prepared by magnetron sputtering or chemical methods such as solution coating and sol–gel techniques have been described. The electroluminescent characteristics were evaluated by thin-film electroluminescent (TFEL) devices using Ga 2O 3:Mn thin films as the emitting layer. The photoluminescent and electroluminescent characteristics were mainly correlated to the crystallographical properties of the thin-film emitting layer. A luminance of 13.5 cd/m 2 was obtained in a TFEL device using an as-deposited Ga 2O 3:Mn thin film prepared by magnetron sputtering when driven at 1 kHz. Luminances above 500 and 100 cd/m 2 were obtained in TFEL devices using annealed Ga 2O 3:Mn thin films regardless of the thin-film deposition techniques, when driven at 1 kHz and 60 Hz, respectively.
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