Abstract
Our low-temperature photoluminescence studies of Mn-doped Al xGa 1−xAs-alloys reveal a linear shift of the Mn-acceptor level with increasing Al-content x. Using the Mn-acceptor as a reference level, we determine a valence-band offset between GaAs and AlAs of ΔE v=0.33eV. At x≈0.25 the Mn-related donor-to-acceptor pair-transitions interchange with the internal d-shell transitions within the Mn-acceptor. Characteristic luminescence transitions in GaAs quantum wells doped with Mn are identified with the recombination of electrons with the Mn-acceptor bound holes. In these quantum wells, the Mn-level shifts with decreasing well-width parallel to the heavy-hole band.
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