Abstract
p-type In0.53Ga0.47As doped with manganese has been grown lattice matched to (100) InP substrates by liquid-phase epitaxy (LPE) at 604 and 550 °C. The electrical properties of the layers at room temperature and at 77 K are reported and compared to previously available data. Hole concentrations in the range from 4×1016 to 3×1018 cm−3 were obtained without difficulty. From these measurements, an activation energy for manganese acceptors of 52.3 ± 1.8 meV, and an effective distribution coefficient of unity are estimated. In addition, the effect of manganese doping on the phase equilibrium of the In-Ga-As system was investigated in the region of interest for LPE growth on InP, and the information necessary to grow p-type layers of In0.53Ga0.47As on InP with controlled supercooling and precise lattice matching is presented.
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