Managing Subthreshold Leakage in Charge-Based Analog Circuits With Low-&amp;lt;tex&amp;gt;$V_rm TH$&amp;lt;/tex&amp;gt;Transistors by Analog T- Switch (AT-Switch) and Super Cut-off CMOS (SCCMOS)

K Ishida,A Tamtrakarn,H Kawaguchi,T Sakurai,K Kanda

doi:10.1109/jssc.2006.870761

Managing Subthreshold Leakage in Charge-Based Analog Circuits With Low-&lt;tex&gt;$V_rm TH$&lt;/tex&gt;Transistors by Analog T- Switch (AT-Switch) and Super Cut-off CMOS (SCCMOS)

K Ishida, A Tamtrakarn + Show 3 more

https://doi.org/10.1109/jssc.2006.870761

Copy DOI

Journal: IEEE Journal of Solid-state Circuits	Publication Date: Apr 1, 2006
Citations: 57

Affiliation: The University of Tokyo

#Super Cut-off CMOS #Sigma-delta Modulator + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

The analog T-switch (AT-switch) scheme is introduced to suppress subthreshold-leakage problems in charge-based analog circuits such as switched capacitors and sample-and-hold circuits. A 0.5-V sigma-delta modulator is manufactured in a 0.15-/spl mu/m FD-SOI process with low V/sub TH/ of 0.1 V using the concept. The scheme is compared with another leakage-suppression scheme based on super cut-off CMOS (SCCMOS) and the conventional circuit which are also fabricated. The sigma-delta modulator based on AT-switch greatly improves 8.1-dB SNDR through reducing nonlinear leakage effects while the modulator based on SCCMOS improves the dynamic range rather than the SNDR by comparing with the conventional sigma-delta modulator.

Full Text