Management of Phonon Transport in Lateral Direction for Gap-Controlled Si Nanopillar/SiGe Interlayer Composite Materials

Daisuke Ohori,Masayuki Murata,Ming-Yi Lee,Min-Hui Chuang,Jenn-Hwan Tarng,Yao-Jen Lee,Yiming Li,Seiji Samukawa,Sou Takeuchi,Asahi Sato,Kazuhiko Endo,Atsushi Yamamoto

doi:10.1109/ojnano.2021.3131165

Daisuke Ohori, Masayuki Murata + Show 10 more

Open Access

https://doi.org/10.1109/ojnano.2021.3131165

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Abstract

The phonon transport in the lateral direction for gap-controlled Si nanopillar/SiGe interlayer composite materials was investigated to eliminate heat generation in the channel area for advanced MOS transistors. The gap-controlled Si NP/SiGe composite layer showed 1/100 times lower thermal conductivity than Si bulk. Then, the phonon transport behavior in lateral direction could be predicted by the combination between 3-omega measurement method for thermal conductivity and Landauer approach for phonon transport in Si NP/Si0.7Ge0.3 interlayer composite structure. We found that the NP structure could regulate the phonon transport in the lateral direction by changing the NP gaps. As such, this structure achieves the first step toward phonon transport management in the same electron transportation direction of planar-type MOSFETs and represents a promising solution to heat generation for advanced CMOS devices.

Highlights

The phonon transport in the lateral direction for gap-controlled Si nanopillar (NP) /SiGe interlayer composite materials was investigated to eliminate heat generation in the channel area for advanced MOS transistors
Phonon transport behavior through thermal conductivity was investigated by the 3-omega method and Lander approach for a thermally managed Si NP/Si0.7Ge0.3 interlayer composite structure
Results showed that our Si NP/Si0.7Ge0.3 interlayer composite film had a 1/100 times lower thermal conductivity than Si bulk thanks to controlling the phonon transports in the lateral direction

Summary

INTRODUCTION1

IN recent years, the development of a smart society due to advances with Artificial Intelligence (AI) and Internet of Things (IoT) data communication has led to a greater demand for semiconductor devices [1,2,3,4,5]. Electrons can transfer the channel region to the lateral direction of the NP structure without any scattering, and phonons are sufficiently scattered by the NP interface. Well-phonon-scattered structures of well-ordered Si NP in the channel region work to prevent heat penetration from the drain and potential heat generation due to not disturbing the electron transportation. As a result, this structure enables the phonon-electron scattering to be eliminated, achieves higher electron mobility, and reduces the heat generation of the MOSFET. A well-aligned Si NP structure with SiGe embedding will provide a high-performance MOSFET by increasing the electron mobility and controlling the phonon transport scattering. We performed measurements using the 3-omega method and simulation

EXPERIMENT

RESULTS AND DISCUSSION

CONCLUSION