Abstract
Multiple closely spaced layers of GaAs <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1−x</inf> P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> , which approximate a one-dimensional crystalline superlattice, have been created by periodically pulsing PH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> into an AsH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> -PH <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> -Ga-HCl vapor-growth apparatus. The phosphorus mole fraction varies between maximum and minimum values with a period typically less than 200Å. Structures with up to 150 such layers have been produced. The crystal growth process and methods of characterization are discussed briefly.
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