Abstract
AbstractThe sensitivity of Makyoh topography is analysed using analytic model calculations for the study of surface topographical fingerprints of localised defects. The effects of non‐ideal collimation of the illumination is considered. Supporting experimental data on the investigation of the swirl defect in p‐type Si wafers are presented. A height sensitivity of better than 30 nm over 1.5 mm spatial period is demonstrated by comparison to surface stylus profiling. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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