Abstract
In this review, we provide an overview of the most common majority and minority charge carrier traps in n-type 4H-SiC materials. We focus on the results obtained by different applications of junction spectroscopy techniques. The basic principles behind the most common junction spectroscopy techniques are given. These techniques, namely, deep-level transient spectroscopy (DLTS), Laplace DLTS (L-DLTS), and minority carrier transient spectroscopy (MCTS), have led to recent progress in identifying and better understanding the charge carrier traps in n-type 4H-SiC materials.
Highlights
In this review, we provide an overview of the most common majority and minority charge carrier traps in n-type 4H-SiC materials
We focus on the results obtained by different applications of junction spectroscopy techniques
We provide an overview of the main majority and minority charge carrier traps in n‐type 4H‐SiC materials. We focus this overview on the recent advances achieved by means of junction spectroscopy techniques
Summary
It has the largest bandgap among all SiC polytypes, and due to the high and isotropic mobility of charge carriers, it is preferred as a material for power electronics [1], bipolar devices [2], and quantum sensing [3] It has found applications in radiation detection too [1,4,5]. We provide an overview of the main majority and minority charge carrier traps in n-type 4H-SiC materials. We focus this overview on the recent advances. We focus this overview on the recent advances achieved by means of junction spectroscopy techniques.
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