Abstract
The main mechanisms of the conduction electrons mobility fluctuations, originating in n-type semiconductors with electron traps are investigated. It is shown that the current carriers mobility fluctuations are determined by the energy fluctuations. Fundamental sources of electron mobility fluctuations are established. The first source is established to be related with a non-elasticity of electron random scattering processes: intraband scatterings and electronic transitions trap-conduction band. The second source of mobility fluctuations is established to be related with random character of the transitions of conductance electrons trough the potential barriers of p-n junctions or/and ohmic contacts.
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