Abstract

The main mechanisms of the conduction electrons mobility fluctuations, originating in n-type semiconductors with electron traps are investigated. It is shown that the current carriers mobility fluctuations are determined by the energy fluctuations. Fundamental sources of electron mobility fluctuations are established. The first source is established to be related with a non-elasticity of electron random scattering processes: intraband scatterings and electronic transitions trap-conduction band. The second source of mobility fluctuations is established to be related with random character of the transitions of conductance electrons trough the potential barriers of p-n junctions or/and ohmic contacts.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.