Abstract
The main features of the spin wave band structure formation and manipulation in the magnonic crystal – semiconductor layered heterostructure have been studied. We demonstrate possibility of double electric and magnetic control of band gap characteristics within the spectra of propagating spin waves. It is shown that in the magnonic crystal- semiconductor heterostructure, when a positive polarity voltage is applied to the semiconductor layer, the band gap in the spin-wave spectrum shifts to the low-frequency region, while for the negative polarity the band position is practically not changed. We show also that as the magnitude of the applied magnetic field is increased the shift of the band gap is decreased. Our results show the possibility of integration of magnonics and semiconductor electronics on the base of proposed structure.
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