Magnon resonant tunneling effect in double-barrier insulating magnon junctions and magnon field effect transistor

Abstract

We predict a magnonic resonant tunneling phenomenon in the double-barrier insulating magnon junctions of ${\text{FI}}_{1}/{\text{AFI}}_{1}/{\text{FI}}_{2}/{\text{AFI}}_{2}/{\text{FI}}_{3}$, where ${\text{FI}}_{(1,2,3)}$ and ${\text{AFI}}_{(1,2)}$ denote the ferromagnetic and antiferromagnetic insulating layers, respectively. Similar to electron tunneling in well-known double-barrier magnetic tunnel junctions, each antiferromagnetic insulator layer acts as an effective potential barrier for magnons due to its intrinsically large magnon-spectrum gap of the order of THz. Based on the magnon tunneling effect, we further propose a magnon field effect transistor that is capable of realizing a gate-tunable transmitted magnon flow by tuning the resonant tunneling via a gate electric field induced Dzyaloshinskii-Moriya interaction in the middle FI layer. The advantages of such transistors include their broadband frequency width ranging from GHz to THz at room temperature, high scalability, and intrinsic low dissipation without Joule heating loss.