Abstract
Pb0.4Sr0.6(Ti0.97Mg0.03)O2.97 (PST) thin films were deposited on ITO/glass substrates with (100)/(001) oriented Tb-doped-PbTiO3 (Tb-PT) layer inserted by magnetron sputtering method at room temperature. And the PST thin film is well-crystallized in (100) direction at annealing temperature of 600°C for 30min. The oriented Tb-PT layer promotes a (100) orientation, restrains structural distortion and improves phase quality of PST thin film. The (100) oriented PST thin film has higher permittivity and lower dielectric loss compared with the randomly oriented one. The tunability of the PST thin film is dramatically improved by 90% compared to that of randomly oriented PST without Tb-PT inserting layer, from 33% for randomly oriented PST without the inserting layer to 62.66% for the oriented one with the inserting layer. It is attractable to be used in high quality dielectric tunable devices.
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