Abstract
AbstractThe surface step structure of step graded Si1-xGex buffers was investigated by scanning tunneling microscopy (STM). On pseudomorphically grown samples, single atomic steps were found, with the 2×8 reconstruction indicating Ge segregation. Upon strain relaxation, surface slips and the development of the cross-hatched surface takes place. Here, close to the surface slips, the step structure was found to consist of double height DA steps. This feature is not simply kinematically driven step bunching but can be attributed to the anisotropic strain field on the surface and to the Ge segregation. Analysis of STM cross-sections were taken to estimate the relaxation of our samples. The obtained values agree well with x-ray measurements. The relaxation is found to depend exponentially on the temperature, as theoretically expected.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
