Abstract
We present a theoretical study of momentum-resolved tunneling between parallel two-dimensional conductors whose charge carriers have a (pseudo)spin-1/2 degree of freedom that is strongly coupled to their linear orbital momentum. Specific examples are single- and bilayer graphene as well as single-layer molybdenum disulfide. Resonant behavior of the differential tunneling conductance exhibited as a function of an in-plane magnetic field and bias voltage is found to be strongly affected by the (pseudo)spin structure of the tunneling matrix. We discuss ramifications for the direct measurement of electronic properties such as Fermi surfaces and dispersion curves. Furthermore, using a graphene double-layer structure as an example, we show how magnetotunneling transport can be used to measure the pseudospin structure of tunneling matrix elements, thus enabling electronic characterization of the barrier material.
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