Abstract
Magnetotransport measurements were performed on a Permalloy/Mg/SiO2/n+-Si (100) spin-valve tunnelling device. Magnetic force microscope imaging proves the single-domain state of the 1 µm elongated and 200 nm wide parallel Permalloy (Py) electrodes. Anisotropic magnetoresistance (AMR) measurements reveal precisely the magnetic field interval of antiparallel magnetization configuration essential for spin-valve operation, in between the switching fields of 15 and 40 mT. Unlike the negative AMR of the Py wires, the tunnelling device shows a small positive magnetoresistance for antiparallel magnetization configuration, as expected for the spin-blockade mechanism.
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