Abstract
We have successfully grown MnAs/ZnSnAs2/ZnSnAs2:Mn trilayer heterostructures on InP(001) substrates by molecular beam epitaxy. The magnetization curve showed small double steps due to the difference in coercive force between the ferromagnetic MnAs and ZnSnAs2:Mn layers. The current-in-plane giant magnetoresistance was clearly observed in magnetoresistance (MR) measurements in current-in-plane geometry. The MR ratio was found to be two times higher than that of single MnAs layer. This enhanced MR ratio can be ascribed to the GMR behavior in the trilayers, resulting from the change of the magnetization of the two ferromagnetic layers between parallel and antiparallel configuration. The temperature dependence of MR ratios also differ between the samples of trilayer and MnAs single layer.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
