Abstract
Boron-incorporated Mn5SiC nanowires were grown using chemical vapor deposition method. The nanowire cluster exhibits magnetic hysteresis loops at room temperature and the strength of the magnetic behavior depends on the concentration of the boron incorporation. Mn5SiC nanowire-based devices exhibit spin dependent transport properties which shows significant changes with boron content. Large magnetoresistance is observed in lightly boron-incorporated nanowire devices and it decreases with increase in boron content.
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