Abstract
We report the magnetoresistance (MR) properties of quasi-two-dimensional mesoscopic graphite (MG) spin valve devices consisting of MG flakes contacted by ferromagnetic (FM) electrodes. For devices in which an ultrathin magnesium oxide $(\mathrm{MgO})$ tunnel barrier is inserted at the FM/MG interface, the spin valve effect has been observed, with MR magnitudes up to 12% at $7\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ and signals persisting up to temperatures as high as $60\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. In contrast, the spin valve effect has not been seen in devices without $\mathrm{MgO}$, suggesting the importance of spin-dependent interfacial resistance for spin injection into MG. In addition, an investigation of the voltage bias dependence and gate voltage dependence of MR has been performed.
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