Abstract
We study the magnetotransport properties of nonmagnetic (In,Zn)As/InAs p-n junctions prepared by liquid phase epitaxy. The junctions show a clear rectifying behavior. A relatively large positive magnetoresistance is observed and its maximum value is greater than 140% at 12 K and gets to 38% at 292 K when a small magnetic field of 1.38 T is applied, which is not related to the series resistance. We attribute the observed magnetoresistance to the impurity-assisted tunneling mechanism.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
