Abstract

P-type ferromagnetic Cr1-δTe thin films with the Curie temperature of 170K were epitaxially grown on GaAs substrate. Low-temperature magnetotransport study reveals that the film has a strong perpendicular magnetic anisotropy (PMA) and an anisotropic magnetoresistance (AMR) ratio up to 8.1%. Furthermore, reduced anomalous Hall effect is observed at low temperatures in Cr1-δTe, suggesting the possible crossover of the contribution to AHE from the intrinsic mechanism to extrinsic skew scattering. Distinctive from conventional transition metal ferromagnets, the AMR ratio is also greatly suppressed at low temperatures. Our work demonstrates that epitaxial Cr1-δTe films are interesting platforms for studying the physics underlying the strong PMA and large AMR.

Highlights

  • Magnetic materials with perpendicular magnetic anisotropy (PMA) have attracted special interest in the field of spintronics, which utilizes the spin degree of freedom for information storage and processing

  • Typical PMA materials studied so far include the multilayers based on transition metals and noble metals,[2] FeCoB,[3] FePt,[4] diluted magnetic semiconductors,[5] quantum anomalous Hall insulators,[6,7] and iridate-manganite heterostructures.[8]

  • We have studied systematically the anomalous Hall effect (AHE) and anisotropic magnetoresistance (AMR) of p-type ferromagnetic Cr1-δTe (δ ∼ 0.33) thin films epitaxially grown aElectronic mail: wangg@sustc.edu.cn & heht@sustc.edu.cn

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Summary

Introduction

Magnetic materials with perpendicular magnetic anisotropy (PMA) have attracted special interest in the field of spintronics, which utilizes the spin degree of freedom for information storage and processing. The measured AHE exhibits well-defined square hysteresis below Curie temperature (T C=170K) in perpendicular magnetic field, revealing the presence of strong perpendicular magnetic anisotropy in the Cr1-δTe film. Very different from conventional transition metals or alloys,[16] the AMR ratio of the film shows a nonmonotonic temperature dependence below T C and can be as high as 8.1%.

Results
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