Abstract
Electric and magnetoresistive properties of Coх(MgF2)100-х thin films (14 ≤ x, ат. % ≤ 62) were investigated. It is established that the received films have a composite structure. Magnetoresistive and electric properties of the films in initial state and after heat treatment have been investigated. The magnetoresistive effect of the studied samples in initial state reaches 7,5% in magnetic field of 10 kOe. It is established that the composites structure is steady against thermal heating up to 250 °C. The change of composites magnetoresistive effect after heat treatment depends on the Co concentration. The particularities of the magnetoresistive changes after annealing are discussed.
Highlights
One of the most characteristic properties of nanogranular ferromagnetic metal-insulator composites is the tunneling magnetoresistance (TMR)
High values of TMR have been observed in cobalt based composites [1]: in Co-Al-O composites the magnetoresistance reaches 7-8 % [2] and in some cases it reaches 10 % [3]
Despite the high values of the TMR observed in the composites the presence of an oxide matrix leads to some undesirable phenomena
Summary
One of the most characteristic properties of nanogranular ferromagnetic metal-insulator composites is the tunneling magnetoresistance (TMR). High values of TMR have been observed in cobalt based composites [1]: in Co-Al-O composites the magnetoresistance reaches 7-8 % [2] and in some cases it reaches 10 % [3]. Despite the high values of the TMR observed in the composites the presence of an oxide matrix leads to some undesirable phenomena. In particular the metal phase can be oxidized during deposition and subsequent storage of the composites. The oxidizing affects to the properties of the formed samples usually worsening them. The aim of the present work was to obtain a twophase metal-insulator nanocomposite based on an oxygen-free matrix capable to exhibit high values of the magnetoresistive effect and save these values under thermal action
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